Invention Grant
- Patent Title: Epitaxial substrate for semiconductor element, semiconductor element, PN junction diode, and method for manufacturing an epitaxial substrate for semiconductor element
- Patent Title (中): 半导体元件用外延基板，半导体元件，PN结二极管及半导体元件用外延基板的制造方法
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Application No.: US13746879Application Date: 2013-01-22
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Publication No.: US09024325B2Publication Date: 2015-05-05
- Inventor: Makoto Miyoshi , Tomohiko Sugiyama , Mikiya Ichimura , Mitsuhiro Tanaka
- Applicant: NGK Insulators, Ltd.
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JP2010-170320 20100729
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/20 ; H01L29/778 ; H01L29/20 ; H01L29/66 ; H01L29/861 ; C30B23/02 ; C30B25/18 ; C30B29/40 ; H01L21/02
Abstract:
Provided is an epitaxial substrate for use in a semiconductor element, having excellent characteristics and capable of suitably suppressing diffusion of elements from a cap layer. An epitaxial substrate for use in a semiconductor element, in which a group of group-III nitride layers are laminated on a base substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a substrate surface of the base substrate, includes: a channel layer made of a first group-III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); a barrier layer made of a second group-III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0); an anti-diffusion layer made of AlN and having a thickness of 3 nm or more; and a cap layer made of a third group-III nitride having a composition of Inx3Aly3Gaz3N (x3+y3+z3=1, z3>0).
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