Invention Grant
US09024281B2 Method for dual energy implantation for ultra-shallow junction formation of MOS devices
有权
双能量注入方法用于MOS器件的超浅结结形成
- Patent Title: Method for dual energy implantation for ultra-shallow junction formation of MOS devices
- Patent Title (中): 双能量注入方法用于MOS器件的超浅结结形成
-
Application No.: US13906897Application Date: 2013-05-31
-
Publication No.: US09024281B2Publication Date: 2015-05-05
- Inventor: Hanming Wu , Chia Hao Lee , John Chen
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN200910054410 20090703
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01J37/30 ; H01L21/223 ; H01L21/265 ; H01L29/08 ; H01L29/66 ; H01L29/78
Abstract:
An apparatus for implanting ions of a selected species into a semiconductor wafer includes an ion source, an accelerator, and an magnetic structure. The ion source is configured to generate an ion beam. The accelerator is configured to accelerate the ion beam, where the accelerated ion beam includes at least a first portion having a first energy and a second portion having a second energy. The magnetic structure is configured to deflect the first portion of the accelerated ion beam in a first path trajectory and the second portion of the accelerated ion beam in a second path trajectory. The first and second path trajectories have a same incident angle relative to a surface region of the semiconductor wafer.
Public/Granted literature
- US20130264491A1 METHOD FOR DUAL ENERGY IMPLANTATION FOR ULTRA-SHALLOW JUNCTION FORMATION OF MOS DEVICES Public/Granted day:2013-10-10
Information query
