Invention Grant
- Patent Title: Epitaxy level packaging
- Patent Title (中): 外延级包装
-
Application No.: US13724155Application Date: 2012-12-21
-
Publication No.: US09023729B2Publication Date: 2015-05-05
- Inventor: Eric Ting-Shan Pan
- Applicant: Eric Ting-Shan Pan
- Applicant Address: US NV Zephyr Cove
- Assignee: Athenaeum, LLC
- Current Assignee: Athenaeum, LLC
- Current Assignee Address: US NV Zephyr Cove
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L29/40 ; H01L21/78 ; H01L21/768 ; H01L23/498 ; C30B19/12 ; C30B23/02 ; C30B25/18 ; H01L21/20 ; H01L23/00
Abstract:
A method of growth and transfer of epitaxial structures from semiconductor crystalline substrate(s) to an assembly substrate. Using this method, the assembly substrate encloses one or more semiconductor materials and defines a wafer size that is equal to or larger than the semiconductor crystalline substrate for further wafer processing. The process also provides a unique platform for heterogeneous integration of diverse material systems and device technologies onto one single substrate.
Public/Granted literature
- US20130200429A1 EPITAXY LEVEL PACKAGING Public/Granted day:2013-08-08
Information query
IPC分类:
