Invention Grant
- Patent Title: Ultrathin body fully depleted silicon-on-insulator integrated circuits and methods for fabricating same
- Patent Title (中): 超薄体完全耗尽绝缘体上的集成电路及其制造方法
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Application No.: US13530449Application Date: 2012-06-22
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Publication No.: US09023713B2Publication Date: 2015-05-05
- Inventor: Ralf Illgen , Stefan Flachowsky
- Applicant: Ralf Illgen , Stefan Flachowsky
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/324 ; H01L21/762 ; H01L21/84 ; H01L27/12 ; H01L29/165 ; H01L29/66 ; H01L29/78 ; H01L29/786 ; H01L29/51
Abstract:
Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing an ultrathin body (UTB) fully depleted silicon-on-insulator (FDSOI) substrate. A PFET temporary gate structure and an NFET temporary gate structure are formed on the substrate. The method implants ions to form lightly doped active areas around the gate structures. A diffusionless annealing process is performed on the active areas. Further, a compressive strain region is formed around the PFET gate structure and a tensile strain region is formed around the NFET gate structure.
Public/Granted literature
- US20130341722A1 ULTRATHIN BODY FULLY DEPLETED SILICON-ON-INSULATOR INTEGRATED CIRCUITS AND METHODS FOR FABRICATING SAME Public/Granted day:2013-12-26
Information query
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