Invention Grant
- Patent Title: Micromechanical semiconductor sensing device
- Patent Title (中): 微机械半导体感测装置
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Application No.: US13329618Application Date: 2011-12-19
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Publication No.: US09021887B2Publication Date: 2015-05-05
- Inventor: Franz-Peter Kalz , Horst Theuss , Bernhard Winkler , Khalil Hosseini , Joachim Mahler , Manfred Mengel
- Applicant: Franz-Peter Kalz , Horst Theuss , Bernhard Winkler , Khalil Hosseini , Joachim Mahler , Manfred Mengel
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G01B7/16
- IPC: G01B7/16 ; B81B7/02 ; G01L9/00 ; G01L19/00
Abstract:
Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.
Public/Granted literature
- US20130152696A1 MICROMECHANICAL SEMICONDUCTOR SENSING DEVICE Public/Granted day:2013-06-20
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