Invention Grant
US08988962B2 Refresh circuit of a semiconductor memory device and refresh control method of the semiconductor memory device
有权
半导体存储器件的刷新电路和半导体存储器件的刷新控制方法
- Patent Title: Refresh circuit of a semiconductor memory device and refresh control method of the semiconductor memory device
- Patent Title (中): 半导体存储器件的刷新电路和半导体存储器件的刷新控制方法
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Application No.: US13749687Application Date: 2013-01-25
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Publication No.: US08988962B2Publication Date: 2015-03-24
- Inventor: Sang-Ho Shin , Jung-Bae Lee , Min-Jeung Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2012-0011906 20120206
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/402 ; G11C11/406

Abstract:
A refresh circuit and a semiconductor memory device including the refresh circuit are disclosed. The refresh circuit includes a mode register, a refresh controller and a multiplexer circuit. The mode register generates a mode register signal having information relating to a memory bank on which a refresh operation is to be performed. The refresh controller generates a self-refresh active command and a self-refresh address based on a self-refresh command and an oscillation signal. The multiplexer circuit may include a plurality of multiplexers. Each of the multiplexers selects one of an active command and the self-refresh active command in response to bits of the mode register signal. Each of the multiplexers generates a row active signal based on the selected command, and selects one of an external address and the self-refresh address to generate a row address.
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