Invention Grant
- Patent Title: Programmable memory built in self repair circuit
- Patent Title (中): 可编程存储器内置自修复电路
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Application No.: US13834856Application Date: 2013-03-15
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Publication No.: US08988956B2Publication Date: 2015-03-24
- Inventor: Rajesh Chopra
- Applicant: MoSys, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: MoSys, Inc.
- Current Assignee: MoSys, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Wagner Blecher LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/04 ; G11C29/44

Abstract:
An integrated circuit chip comprising at least one programmable built-in self-repair (PBISR) for repairing memory is described. The PBISR comprises an interface that receives signals external to the integrated chip. The PBISR further includes a port slave module that programs MBISR registers, program and instruction memory. The PBISR further comprises a programmable transaction engine and a programmable checker. Further, the MBISR comprises an eFUSE cache that implements logic to denote defective elements.
Public/Granted literature
- US20140078841A1 PROGRAMMABLE MEMORY BUILT IN SELF REPAIR CIRCUIT Public/Granted day:2014-03-20
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