Invention Grant
US08988956B2 Programmable memory built in self repair circuit 有权
可编程存储器内置自修复电路

Programmable memory built in self repair circuit
Abstract:
An integrated circuit chip comprising at least one programmable built-in self-repair (PBISR) for repairing memory is described. The PBISR comprises an interface that receives signals external to the integrated chip. The PBISR further includes a port slave module that programs MBISR registers, program and instruction memory. The PBISR further comprises a programmable transaction engine and a programmable checker. Further, the MBISR comprises an eFUSE cache that implements logic to denote defective elements.
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