Invention Grant
- Patent Title: Semiconductor memory device and driving method of the same
- Patent Title (中): 半导体存储器件及其驱动方法
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Application No.: US13606793Application Date: 2012-09-07
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Publication No.: US08988933B2Publication Date: 2015-03-24
- Inventor: Ryousuke Takizawa
- Applicant: Ryousuke Takizawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JPP2012-065370 20120322
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; G11C11/15 ; G11C5/14

Abstract:
A non-volatile semiconductor memory device that can reduce power consumption includes plural memory banks containing nonvolatile plural memory cells. A common data bus is shared by plural memory banks and transmits the data of the memory cells. The plural switches are provided respectively between the electric source and plural memory banks. A controller controls the plural switches. The controller, in the data reading-out action or the data writing-in action, makes at least one of the switches corresponding to at least one of the memory banks accessible in a conduction state, and other switches in a non-conduction state.
Public/Granted literature
- US20130250664A1 SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD OF THE SAME Public/Granted day:2013-09-26
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