Various embodiments comprise apparatuses having at least two resistance change memory (RCM) cells. In one embodiment, an apparatus includes at least two electrical contacts coupled to each of the RCM cells. A memory cell material is disposed between pairs of each of the electrical contacts coupled to each of the RCM cells. The memory cell material is capable of forming a conductive pathway between the electrical contacts with at least a portion of the memory cell material arranged to cross-couple a conductive pathway between select ones of the at least two electrical contacts electrically coupled to each of the at least two RCM cells. Additional apparatuses and methods are described.