Invention Grant
US08972158B2 Semiconductor device providing a current control function and a self shut down function
有权
提供电流控制功能和自动关闭功能的半导体器件
- Patent Title: Semiconductor device providing a current control function and a self shut down function
- Patent Title (中): 提供电流控制功能和自动关闭功能的半导体器件
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Application No.: US13371692Application Date: 2012-02-13
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Publication No.: US08972158B2Publication Date: 2015-03-03
- Inventor: Shigemi Miyazawa
- Applicant: Shigemi Miyazawa
- Applicant Address: JP
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2011-034463 20110221
- Main IPC: F02P3/05
- IPC: F02P3/05 ; F02P3/055

Abstract:
Aspects of the invention are directed to an ignition semiconductor device that includes an output IGBT for ON-OFF control of a primary current in an ignition coil and a current control circuit for controlling a magnitude of the primary current in the ignition coil, the current control circuit being operated by the voltage between the gate terminal and the emitter terminal. The current control circuit can include a sense IGBT, a sense resistance, a gate resistance, a reference voltage, level shift circuits, a self shut down signal generator, a self shut down circuit, an operational amplifier, a MOSFET, a gate voltage control circuit , a pulse generation circuit, and a switching circuit. The self shut down signal generator, on detecting an abnormal state, can deliver a self shut down signal and the pulse generation circuit can generate a pulse signal to short-circuit the switching circuit.
Public/Granted literature
- US20120215431A1 SEMICONDUCTOR DEVICE PROVIDING A CURRENT CONTROL FUNCTION AND A SELF SHUT DOWN FUNCTION Public/Granted day:2012-08-23
Information query
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