Invention Grant
US08971135B2 Semiconductor memory device receiving data in response to data strobe signal, memory system including the same and operating method thereof
有权
半导体存储器件响应于数据选通信号接收数据，存储器系统包括它们及其操作方法
- Patent Title: Semiconductor memory device receiving data in response to data strobe signal, memory system including the same and operating method thereof
- Patent Title (中): 半导体存储器件响应于数据选通信号接收数据，存储器系统包括它们及其操作方法
-
Application No.: US13910502Application Date: 2013-06-05
-
Publication No.: US08971135B2Publication Date: 2015-03-03
- Inventor: Sang Oh Lim
- Applicant: SK Hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C8/18 ; G11C7/22 ; G11C7/10
Abstract:
A semiconductor memory device includes an input/output circuit configured to receive an address and data from an exterior, and a peripheral circuit configured to receive the address through the input/output circuit and generate a chip selection signal based on the address. The input/output circuit may include a control pad circuit configured to apply or block at least one data strobe signal in response to the chip selection signal, and one or more input/output pad circuits configured to transfer the data to the peripheral circuits in response to the at least one data strobe signal.
Public/Granted literature
- US20130322192A1 SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME AND OPERATING METHOD THEREOF Public/Granted day:2013-12-05
Information query
