Invention Grant
US08971125B2 Erase operations with erase-verify voltages based on where in the erase operations an erase cycle occurs
有权
根据擦除操作中的擦除周期发生在擦除验证电压下擦除操作
- Patent Title: Erase operations with erase-verify voltages based on where in the erase operations an erase cycle occurs
- Patent Title (中): 根据擦除操作中的擦除周期发生在擦除验证电压下擦除操作
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Application No.: US13539990Application Date: 2012-07-02
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Publication No.: US08971125B2Publication Date: 2015-03-03
- Inventor: Deping He
- Applicant: Deping He
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Memory devices and methods of erasing the memory devices are disclosed. One such method includes performing an erase cycle of an erase operation on a plurality of memory cells, where performing the erase cycle of the erase operation includes selecting an erase verify voltage to be applied during the erase cycle from a plurality of erase verify voltages based on where in the erase operation the erase cycle occurs.
Public/Granted literature
- US20140003156A1 ERASE OPERATIONS WITH ERASE-VERIFY VOLTAGES BASED ON WHERE IN THE ERASE OPERATIONS AN ERASE CYCLE OCCURS Public/Granted day:2014-01-02
Information query
