Invention Grant
US08971094B2 Replacement of a faulty memory cell with a spare cell for a memory circuit
有权
用存储器电路的备用单元替换故障存储单元
- Patent Title: Replacement of a faulty memory cell with a spare cell for a memory circuit
- Patent Title (中): 用存储器电路的备用单元替换故障存储单元
-
Application No.: US13782348Application Date: 2013-03-01
-
Publication No.: US08971094B2Publication Date: 2015-03-03
- Inventor: David T. Wang
- Applicant: Inphi Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Inphi Corporation
- Current Assignee: Inphi Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Ogawa P.C.
- Agent Richard T. Ogawa
- Main IPC: G11C29/04
- IPC: G11C29/04 ; G11C11/24 ; G11C29/00 ; G11C7/10 ; G11C11/4093 ; G11C11/408

Abstract:
A memory interface device has an address input(s) configured to receive address information from an address stream of a host controller; an address output(s) configured to drive address information, and is coupled to a plurality of memory devices; an address match table comprising at least a revised address corresponding to a spare memory location; a control module configured to determine address information from an address stream from an address command bus coupled to a host controller during a run time operation; and a multiplexer coupled to the address input and coupled to the address output.
Public/Granted literature
- US20130176768A1 REPLACEMENT OF A FAULTY MEMORY CELL WITH A SPARE CELL FOR A MEMORY CIRCUIT Public/Granted day:2013-07-11
Information query