Invention Grant
- Patent Title: Method and circuit for switching a memristive device in an array
- Patent Title (中): 用于在阵列中切换忆阻器的方法和电路
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Application No.: US13884140Application Date: 2011-01-31
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Publication No.: US08971091B2Publication Date: 2015-03-03
- Inventor: Wei Yi , Muhammad Shakeel Qureshi , Frederick Perner , Richard Carter
- Applicant: Wei Yi , Muhammad Shakeel Qureshi , Frederick Perner , Richard Carter
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Agency: Van Cott, Bagley, Cornwall & McCarthy PC
- Agent Steven L. Nichols
- International Application: PCT/US2011/023252 WO 20110131
- International Announcement: WO2012/067661 WO 20120524
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; H01L27/10
Abstract:
A method of switching a memristive device in a two-dimensional array senses a leakage current through the two-dimensional array when a voltage of half of a switching voltage is applied to a row line of the memristive device. A leakage compensation current is generated according to the sensed leakage current, and a switching current ramp is also generated. The leakage compensation current and the switching current ramp are combined to form a combined switching current, which is applied to the row line of the memristive device. When a resistance of the memristive device reaches a target value, the combined switching current is removed from the row line.
Public/Granted literature
- US20130223134A1 METHOD AND CIRCUIT FOR SWITCHING A MEMRISTIVE DEVICE IN AN ARRAY Public/Granted day:2013-08-29
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