Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12554245Application Date: 2009-09-04
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Publication No.: US08971011B2Publication Date: 2015-03-03
- Inventor: Takayuki Miyazaki
- Applicant: Takayuki Miyazaki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-65809 20090318
- Main IPC: H01G5/00
- IPC: H01G5/00 ; H01H59/00

Abstract:
A semiconductor device includes a first static actuator having a first drive electrode and a second drive electrode, the first drive electrode and the second drive electrode being capable of coming close to each other upon shifting from an open state to a close state due to an electrostatic attractive force against an elastic force thereof; a detection circuit configured to detect a temperature of the first static actuator; and a drive circuit configured to apply a first voltage between the first drive electrode and the second drive electrode to maintain the first static actuator in the closed state between the first drive electrode and the second drive electrode, and to switch a polarity of the first voltage every first time period. The drive circuit varies a length of the first time period based on a detection result of the detection circuit.
Public/Granted literature
- US20100238600A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-09-23
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