Invention Grant
- Patent Title: Matrix-stages solid state ultrafast switch
- Patent Title (中): 矩阵式固态超快速开关
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Application No.: US14044356Application Date: 2013-10-02
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Publication No.: US08970286B2Publication Date: 2015-03-03
- Inventor: Boris Reshetnyak , Dante E. Piccone , Victor Temple
- Applicant: Silicon Power Corporation
- Applicant Address: US NY Clifton Park
- Assignee: Silicon Power Corporation
- Current Assignee: Silicon Power Corporation
- Current Assignee Address: US NY Clifton Park
- Agency: Blank Rome LLP
- Main IPC: H03K17/74
- IPC: H03K17/74 ; H03K17/04 ; H03K3/57 ; H03K17/12 ; H03K17/10 ; H03K17/60

Abstract:
A semiconductor switching device for switching high voltage and high current. The semiconductor switching device includes a control-triggered stage and one or more auto-triggered stages. The control-triggered stage includes a plurality of semiconductor switches, a breakover switch, a control switch, a turn-off circuit, and a capacitor. The control-triggered stage is connected in series to the one or more auto-triggered stages. Each auto-triggered stage includes a plurality of semiconductor switches connected in parallel, a breakover switch, and a capacitor. The control switch provides for selective turn-on of the control-triggered stage. When the control-triggered stage turns on, the capacitor of the control-triggered stage discharges into the gates of the plurality of semiconductor switches of the next highest stage to turn it on. Each auto-triggered stage turns on in a cascade fashion as the capacitor of the adjacent lower stage discharges or as the breakover switches of the auto-triggered stages turn on.
Public/Granted literature
- US08866534B2 Matrix-stages solid state ultrafast switch Public/Granted day:2014-10-21
Information query
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