Invention Grant
- Patent Title: Semiconductor device, fabrication process, and electronic device
- Patent Title (中): 半导体器件,制造工艺和电子器件
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Application No.: US14261033Application Date: 2014-04-24
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Publication No.: US08970012B2Publication Date: 2015-03-03
- Inventor: Masaya Nagata
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-054389 20110311
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L23/498 ; H01L27/146 ; H01L21/768

Abstract:
A semiconductor device is provided, including a semiconductor substrate that includes a semiconductor; an electrode layer formed above a first surface side inside the semiconductor substrate; a conductor layer formed above the electrode layer and above the first surface of the semiconductor substrate; a hole formed through the semiconductor substrate from a second surface of the semiconductor substrate to the conductor layer; and a wiring layer that is electrically connected to the electrode layer via the conductor layer at an end portion of the vertical hole, and that extends to the second surface of the semiconductor substrate, the wiring layer being physically separated from the electrode layer by an insulating layer disposed therebetween.
Public/Granted literature
- US20140232002A1 SEMICONDUCTOR DEVICE, FABRICATION PROCESS, AND ELECTRONIC DEVICE Public/Granted day:2014-08-21
Information query
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