Invention Grant
- Patent Title: Photo detector consisting of tunneling field-effect transistors and the manufacturing method thereof
- Patent Title (中): 由隧道场效应晶体管组成的光电探测器及其制造方法
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Application No.: US13446834Application Date: 2012-04-13
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Publication No.: US08969911B2Publication Date: 2015-03-03
- Inventor: Pengfei Wang , Xi Lin , Wei Wang , Xiaoyong Liu , Wei Zhang
- Applicant: Pengfei Wang , Xi Lin , Wei Wang , Xiaoyong Liu , Wei Zhang
- Applicant Address: CN Shanghai
- Assignee: Fudan Univeristy
- Current Assignee: Fudan Univeristy
- Current Assignee Address: CN Shanghai
- Agency: Niro, Haller & Niro
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L31/111 ; H01L31/113 ; G02B6/42 ; H01L31/0232 ; H01L31/18
Abstract:
The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.
Public/Granted literature
- US20120261669A1 PHOTO DETECTOR CONSISTING OF TUNNELING FIELD-EFFECT TRANSISTORS AND THE MANUFACTURING METHOD THEREOF Public/Granted day:2012-10-18
Information query
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