Invention Grant
US08969891B2 Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
有权
氮化物半导体器件，氮化物半导体晶片和氮化物半导体层的制造方法
- Patent Title: Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
- Patent Title (中): 氮化物半导体器件，氮化物半导体晶片和氮化物半导体层的制造方法
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Application No.: US14263503Application Date: 2014-04-28
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Publication No.: US08969891B2Publication Date: 2015-03-03
- Inventor: Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-109070 20110516; JP2012-006068 20120116
- Main IPC: H01L29/201
- IPC: H01L29/201 ; H01L33/00 ; H01L33/32 ; H01L21/02 ; H01L33/12 ; H01L29/20
Abstract:
According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.
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