Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14148766Application Date: 2014-01-07
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Publication No.: US08969877B2Publication Date: 2015-03-03
- Inventor: Shuhei Mitani , Yuki Nakano , Heiji Watanabe , Takayoshi Shimura , Takuji Hosoi , Takashi Kirino
- Applicant: Rohm Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2009-206372 20090907; JP2009-206373 20090907; JP2009-206374 20090907
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/16 ; H01L21/02 ; H01L21/04 ; H01L21/82 ; H01L29/51 ; H01L29/66 ; H01L29/78 ; H01L29/08 ; H01L29/417 ; H01L29/423 ; H01L29/45 ; H01L29/10
Abstract:
A semiconductor device includes a semiconductor layer made of first conductivity type SiC; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region and a second region adjacent to the first region; a gate insulating film formed on the semiconductor layer and having a first portion that contacts the first region; a second portion that contacts the well region and that has a thickness that is the same as that of the first portion; and a third portion that contacts the second region and that has a thickness that is greater than that of the first portion; and a gate electrode formed on the gate insulating film and opposed to the channel region where a channel is formed through the gate insulating film.
Public/Granted literature
- US20140138708A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-05-22
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