Invention Grant
- Patent Title: Method for producing thin layers of crystalline or polycrystalline materials
- Patent Title (中): 制造结晶或多晶材料薄层的方法
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Application No.: US13660213Application Date: 2012-10-25
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Publication No.: US08969183B2Publication Date: 2015-03-03
- Inventor: Mark T. Winkler , Tonio Buonassisi , Riley E. Brandt , Michael J. Aziz , Austin Joseph Akey
- Applicant: Massachusetts Institute of Technology
- Applicant Address: US MA Cambridge US MA Cambridge
- Assignee: President and Fellows of Harvard College,Massachusetts Institute of Technology
- Current Assignee: President and Fellows of Harvard College,Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge US MA Cambridge
- Agency: MIT Technology Licensing Office
- Agent Sam Pasternack
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; C23C16/24 ; H01L21/02 ; C23C16/01 ; C23C16/02 ; H01L21/762 ; H01L31/0368 ; H01L31/075 ; H01L31/18

Abstract:
Method for making thin crystalline or polycrystalline layers. The method includes electrochemically etching a crystalline silicon template to form a porous double layer thereon, the double layer including a highly porous deeper layer and a less porous shallower layer. The shallower layer is irradiated with a short laser pulse selected to recrystallize the shallower layer resulting in a crystalline layer. Silicon is deposited on the recrystallized shallower layer and the silicon is irradiated with a short laser pulse selected to crystalize the silicon leaving a layer of crystallized silicon on the template. Thereafter, the layer of crystallized silicon is separated from the template. The process of the invention can be used to make optoelectronic devices.
Public/Granted literature
- US20130288463A1 METHOD FOR PRODUCING THIN LAYERS OF CRYSTALLINE OR POLYCRYSTALLINE MATERIALS Public/Granted day:2013-10-31
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