Method and apparatus for a piezoelectric apparatus are provided. In some embodiments, a method for fabricating a piezoelectric device may include etching a series of vertical trenches in a top substrate portion, depositing a first continuous conductive layer over the trenches and substrate, depositing a continuous piezoelectric layer over the first continuous conductive layer such that the piezoelectric material has trenches and sidewalls, depositing a second continuous conductive layer over the continuous piezoelectric layer, etching through the vertical trenches of the first continuous conductive layer, continuous piezoelectric layer, second continuous conductive layer, and top substrate portion into a bottom substrate portion, etching a series of horizontal trenches in the bottom substrate portion such that the horizontal trenches and vertical trenches occupy a continuous free space and allow movement of a piezoelectric MEMS device created by the above method in three dimensions.