Invention Grant
- Patent Title: Memory device and memory system
- Patent Title (中): 内存设备和内存系统
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Application No.: US13396791Application Date: 2012-02-15
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Publication No.: US08949687B2Publication Date: 2015-02-03
- Inventor: Man-keun Seo , Jun-jin Kong , Kyoung-Lae Cho
- Applicant: Man-keun Seo , Jun-jin Kong , Kyoung-Lae Cho
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2011-0016028 20110223
- Main IPC: G11C29/00
- IPC: G11C29/00 ; H03M7/30 ; H03M13/05 ; G06F11/10

Abstract:
A memory device and a memory system, the memory system including a data compressor for generating compressed data by compressing program data in a first unit, and an error correction block generator for dividing the compressed data in a second unit to obtain a plurality of pieces of normal data, and generating error correction blocks for correcting errors of the plurality of pieces of normal data, wherein each of the error correction blocks comprises the normal data, invalid data having a size corresponding to the size of the normal data, and parities for the normal data and the invalid data.
Public/Granted literature
- US20120216096A1 Memory Device and Memory System Public/Granted day:2012-08-23
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