Invention Grant
- Patent Title: Current sense amplifiers, memory devices and methods
- Patent Title (中): 电流检测放大器,存储器件和方法
-
Application No.: US12820050Application Date: 2010-06-21
-
Publication No.: US08947964B2Publication Date: 2015-02-03
- Inventor: Onegyun Na , Jongtae Kwak , Seong-Hoon Lee , Hoon Choi
- Applicant: Onegyun Na , Jongtae Kwak , Seong-Hoon Lee , Hoon Choi
- Applicant Address: US ID Boise
- Assignee: Micro Technology, Inc.
- Current Assignee: Micro Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C7/06 ; G11C11/4091

Abstract:
A current sense amplifier may include one or more clamping circuits coupled between differential output nodes of the amplifier. The clamping circuits may be enabled during at least a portion of the time that the sense amplifier is sensing the state of a memory cell coupled to a differential input of the sense amplifier. The clamping circuits may be disabled during the time that the sense amplifier is sensing the state of a memory cell at different times in a staggered manner. The clamping circuits may be effecting in making the current sense amplifier less sensitive to noise signals.
Public/Granted literature
- US20110310687A1 CURRENT SENSE AMPLIFIERS, MEMORY DEVICES AND METHODS Public/Granted day:2011-12-22
Information query