A flash memory device includes a memory cell array, a temperature sensing unit, and a control unit. The memory cell array is configured to store a plurality of pieces of configuration data corresponding to respective temperature levels of the flash memory device, the pieces of configuration data indicative of respective operation parameter values of the flash memory device. The temperature sensing unit is configured to measure an ambient temperature of the flash memory device and to generate temperature level data. The a control unit is configured to receive the temperature level data from the temperature sensing unit, to read a piece of configuration data corresponding to the temperature level data from among the plurality of pieces of configuration data stored in the memory cell array, and to set operation parameters of the flash memory device according to an operation parameter value indicated by the read piece of configuration data.