Invention Grant
- Patent Title: Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same
- Patent Title (中): 磁隧道结装置，存储器，电子系统和存储系统及其制造方法
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Application No.: US13398617Application Date: 2012-02-16
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Publication No.: US08947914B2Publication Date: 2015-02-03
- Inventor: Jeong Heon Park , Woo Chang Lim , Sechung Oh , Woojin Kim , Sang Hwan Park , Jang Eun Lee
- Applicant: Jeong Heon Park , Woo Chang Lim , Sechung Oh , Woojin Kim , Sang Hwan Park , Jang Eun Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0024429 20110318; KR10-2011-0074500 20110727
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; H01L43/08 ; H01L43/10 ; H01L43/12 ; H01L27/22
Abstract:
Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.
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