Invention Grant
- Patent Title: Memory chip with more than one type of memory cell
- Patent Title (中): 内存芯片具有多种类型的内存单元
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Application No.: US13178021Application Date: 2011-07-07
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Publication No.: US08947903B2Publication Date: 2015-02-03
- Inventor: Cheng Hung Lee , XiuLi Yang , Liangbo Zhuang
- Applicant: Cheng Hung Lee , XiuLi Yang , Liangbo Zhuang
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C7/12 ; G11C8/08 ; G11C7/18

Abstract:
A semiconductor memory chip that has word lines driven by respective word line drivers and bit lines to carry signals to respective bit line amplifiers/drivers with memory cells at intersections of the word lines and bit lines memory cells. The semiconductor memory chip including various memory cell types, the type of memory cell at an intersection based on a position of the intersection among the word lines and bit lines.
Public/Granted literature
- US20130010516A1 MEMORY CHIP WITH MORE THAN ONE TYPE OF MEMORY CELL Public/Granted day:2013-01-10
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