Invention Grant
- Patent Title: Semiconductor memory and method of making the same
- Patent Title (中): 半导体存储器及其制作方法
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Application No.: US13412804Application Date: 2012-03-06
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Publication No.: US08947902B2Publication Date: 2015-02-03
- Inventor: Jhon Jhy Liaw
- Applicant: Jhon Jhy Liaw
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G11C5/06
- IPC: G11C5/06
Abstract:
A semiconductor memory includes a first bit cell within an integrated circuit (IC), and a second bit cell within the same IC. The first bit cell has a first layout, and the second bit cell has a second layout that differs from the first layout.
Public/Granted literature
- US20130235640A1 SEMICONDUCTOR MEMORY AND METHOD OF MAKING THE SAME Public/Granted day:2013-09-12
Information query
