According to one embodiment, a solid-state imaging device includes an imaging area, a vertical line drive circuit, and a control circuit. The imaging area is provided with a plurality of unit pixels arrayed like a two-dimensional matrix. Each unit pixel includes a photoelectric conversion element, a read transistor, an amplifier transistor, and a reset transistor. The vertical line drive circuit is configured to select and drive the unit pixels at a unit of row, and to set a signal storage time of the photoelectric conversion element of each driven unit pixel. The control circuit connected to the vertical line drive circuit, is configured to execute a variable control of the signal storage time at a unit of row of the unit pixel.