Invention Grant
- Patent Title: Semiconductor device and electronic device
- Patent Title (中): 半导体器件和电子器件
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Application No.: US14013517Application Date: 2013-08-29
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Publication No.: US08947158B2Publication Date: 2015-02-03
- Inventor: Kazunori Watanabe
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2012-193330 20120903
- Main IPC: H02M3/07
- IPC: H02M3/07 ; G06F1/32 ; H02M3/158

Abstract:
To reduce a variation in the electrical characteristics of a transistor. A potential generated by a voltage converter circuit is applied to a back gate of a transistor included in a voltage conversion block. Since the back gate of the transistor is not in a floating state, a current flowing through the back channel can be controlled so as to reduce a variation in the electrical characteristics of the transistor. Further, a transistor with low off-state current is used as the transistor included in the voltage conversion block, whereby storage of the output potential is controlled.
Public/Granted literature
- US20140068301A1 Semiconductor Device and Electronic Device Public/Granted day:2014-03-06
Information query
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