Invention Grant
US08947158B2 Semiconductor device and electronic device 有权
半导体器件和电子器件

Semiconductor device and electronic device
Abstract:
To reduce a variation in the electrical characteristics of a transistor. A potential generated by a voltage converter circuit is applied to a back gate of a transistor included in a voltage conversion block. Since the back gate of the transistor is not in a floating state, a current flowing through the back channel can be controlled so as to reduce a variation in the electrical characteristics of the transistor. Further, a transistor with low off-state current is used as the transistor included in the voltage conversion block, whereby storage of the output potential is controlled.
Public/Granted literature
Information query
Patent Agency Ranking
0/0