Invention Grant
US08946788B2 Method and system for doping control in gallium nitride based devices
有权
在氮化镓基器件中掺杂控制的方法和系统
- Patent Title: Method and system for doping control in gallium nitride based devices
- Patent Title (中): 在氮化镓基器件中掺杂控制的方法和系统
-
Application No.: US13198661Application Date: 2011-08-04
-
Publication No.: US08946788B2Publication Date: 2015-02-03
- Inventor: Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Linda Romano , David P. Bour , Richard J. Brown , Thomas R. Prunty
- Applicant: Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Linda Romano , David P. Bour , Richard J. Brown , Thomas R. Prunty
- Applicant Address: US CA San Jose
- Assignee: Avogy, Inc.
- Current Assignee: Avogy, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/207 ; H01L21/02 ; H01L29/66 ; H01L29/808 ; H01L29/872 ; H01L29/10 ; H01L29/20
Abstract:
A method of growing a III-nitride-based epitaxial structure includes providing a substrate in an epitaxial growth reactor and heating the substrate to a predetermined temperature. The method also includes flowing a gallium-containing gas into the epitaxial growth reactor and flowing a nitrogen-containing gas into the epitaxial growth reactor. The method further includes flowing a gettering gas into the epitaxial growth reactor. The predetermined temperature is greater than 1000° C.
Public/Granted literature
- US20130032813A1 METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES Public/Granted day:2013-02-07
Information query
IPC分类:
