Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
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Application No.: US14096159Application Date: 2013-12-04
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Publication No.: US08946753B2Publication Date: 2015-02-03
- Inventor: Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
- Applicant: Tsinghua University , Hon Hai Precision Industry Co., Ltd.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN2011103954751 20111203
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/06 ; H01L33/24 ; H01L33/20 ; H01L33/22

Abstract:
A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on the substrate, and a cross section of each of the three-dimensional nano-structures is M-shaped.
Public/Granted literature
- US20140091276A1 LIGHT EMITTING DIODE Public/Granted day:2014-04-03
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