Invention Grant
US08946546B2 Surface treatment of nanocrystal quantum dots after film deposition
有权
膜沉积后纳米晶体量子点的表面处理
- Patent Title: Surface treatment of nanocrystal quantum dots after film deposition
- Patent Title (中): 膜沉积后纳米晶体量子点的表面处理
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Application No.: US13630075Application Date: 2012-09-28
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Publication No.: US08946546B2Publication Date: 2015-02-03
- Inventor: Milan Sykora , Alexey Koposov , Nobuhiro Fuke
- Applicant: Milan Sykora , Alexey Koposov , Nobuhiro Fuke
- Applicant Address: US NM Los Alamos JP Osaka
- Assignee: Los Alamos National Security, LLC,Sharp Corporation
- Current Assignee: Los Alamos National Security, LLC,Sharp Corporation
- Current Assignee Address: US NM Los Alamos JP Osaka
- Agency: Baker & Hostetler LLP
- Main IPC: H01L31/042
- IPC: H01L31/042

Abstract:
Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.
Public/Granted literature
- US20140091278A1 Surface Treatment of Nanocrystal Quantum Dots After Film Deposition Public/Granted day:2014-04-03
Information query
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