Invention Grant
- Patent Title: Positive resist composition and pattern-forming method
- Patent Title (中): 正抗蚀剂组成和图案形成方法
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Application No.: US13173210Application Date: 2011-06-30
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Publication No.: US08945810B2Publication Date: 2015-02-03
- Inventor: Fumiyuki Nishiyama , Hiromi Kanda
- Applicant: Fumiyuki Nishiyama , Hiromi Kanda
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-085212 20070328; JP2008-067962 20080317
- Main IPC: G03F7/039
- IPC: G03F7/039 ; G03F7/38 ; G03F7/004 ; G03F7/20 ; G03F7/075

Abstract:
A positive resist composition comprises: (A) a resin that has a repeating unit represented by general formula (a1) and increases its solubility in an alkali developer by action of an acid; (B) a compound which generates an acid upon irradiation with an actinic ray or a radiation; and (C) a resin that has at least one of a fluorine atom and a silicon atom and has a group selected from the group consisting of (x), (y) and (z); and (D) a solvent: (x) an alkali-soluble group; (y) a group capable that decomposes by action of an alkali developer to undergo an increase in a solubility of the resin (C) in an alkali developer; and (z) a group that decomposes by action of an acid, wherein R represents a hydrogen atom or a methyl group, Rxa represents an alkyl group or a cycloalkyl group, and n represents an integer of 1 to 8.
Public/Granted literature
- US20110305991A1 POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD Public/Granted day:2011-12-15
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