Invention Grant
- Patent Title: Deposition nozzle and apparatus for thin film deposition process
- Patent Title (中): 沉积喷嘴和薄膜沉积工艺的设备
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Application No.: US13495889Application Date: 2012-06-13
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Publication No.: US08944347B2Publication Date: 2015-02-03
- Inventor: Jen-Rong Huang
- Applicant: Jen-Rong Huang
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Rabin & Berdo, P.C.
- Priority: TW100123273A 20110701
- Main IPC: B05B1/28
- IPC: B05B1/28 ; C23C16/455 ; C23C16/458 ; C23C16/48

Abstract:
A deposition nozzle and a deposition apparatus include a nozzle body, a precursor passageway formed at a central region of the nozzle body for a precursor gas to be sprayed on the substrate such that the precursor gas reacts with a surface of the substrate, an extraction passageway formed in the nozzle body and located at a peripheral side of the precursor passageway, and extracting residues after the precursor gas reacts with the surface of the substrate, and an air curtain passageway formed in the nozzle body and located at a peripheral side of the extraction passageway for isolating gas to be sprayed on the substrate so as to form a closed gas flow field enclosing a process reaction region between a substrate carrier and the deposition nozzle such that the residues after the precursor gas reacts with the surface of the substrate do not leak.
Public/Granted literature
- US20130001330A1 DEPOSITION NOZZLE AND APPARATUS FOR THIN FILM DEPOSITION PROCESS Public/Granted day:2013-01-03
Information query
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