Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14175339Application Date: 2014-02-07
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Publication No.: US08944310B2Publication Date: 2015-02-03
- Inventor: Takeshi Matsushita , Eiji Mochizuki , Tatsuo Nishizawa , Shunsuke Saito
- Applicant: Fuji Electric Co., Ltd.
- Applicant Address: JP Kawasaki-shi
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP Kawasaki-shi
- Agent Manabu Kanesaka
- Priority: JP2013-026593 20130214
- Main IPC: B23K31/02
- IPC: B23K31/02 ; H01L23/00
Abstract:
A soldering method achieves little void and good joint condition in soldering an insulated circuit board and a semiconductor chip using a tin-high antimony solder material. A method of manufacturing a semiconductor device includes the steps of preparing a solder plate having a U-shape; mounting the solder plate on a substrate; mounting a semiconductor chip on the solder plate; fusing the solder plate in a reducing gas atmosphere; and reducing a pressure of the reducing gas atmosphere to a pressure lower than the atmospheric pressure when melting the solder plate.
Public/Granted literature
- US20140224862A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2014-08-14
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