Invention Grant
- Patent Title: Remote plasma system and method
- Patent Title (中): 远程等离子体系统和方法
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Application No.: US13679453Application Date: 2012-11-16
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Publication No.: US08944003B2Publication Date: 2015-02-03
- Inventor: Fei-Fan Chen , Wen-Sheng Wu , Chien Kuo Huang
- Applicant: Fei-Fan Chen , Wen-Sheng Wu , Chien Kuo Huang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: C23C16/448
- IPC: C23C16/448 ; C23C16/452 ; C23F1/00 ; H01L21/306 ; H01L21/465 ; H01L21/02 ; H05H1/46 ; H01J37/32 ; C23C16/06 ; C23C16/22
Abstract:
A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.
Public/Granted literature
- US20140141614A1 Remote Plasma System and Method Public/Granted day:2014-05-22
Information query
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