Dynamic graduated memory device protection in redundant array of independent memory (RAIM) systems that include a plurality of memory devices is provided. A first severity level of a first failing memory device in the plurality of memory devices is determined. The first failing memory device is associated with an identifier used to communicate a location of the first failing memory device to an error correction code (ECC). A second severity level of a second failing memory device in the plurality of memory devices is determined. It is determined that the second severity level is higher than the first severity level. The identifier from the first failing memory device is removed based on determining that the second severity level is higher than the first severity level. The identifier is applied to the second failing memory device based on determining that the second severity level is higher than the first severity level.