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US08842942B2 Optical modulator formed on bulk-silicon substrate 有权
在体硅衬底上形成的光调制器

Optical modulator formed on bulk-silicon substrate
Abstract:
An optical modulator comprises a bulk-silicon substrate comprising a trench having a predetermined width and a predetermined depth. A bottom cladding layer is formed in the trench, and a plurality of waveguides and a phase modulation unit are formed on the bottom cladding layer. A top cladding layer is formed on the plurality of waveguides and the phase modulation unit.
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