Invention Grant
US08842707B2 Semiconductor laser element and method of manufacturing semiconductor laser element
有权
半导体激光元件及半导体激光元件的制造方法
- Patent Title: Semiconductor laser element and method of manufacturing semiconductor laser element
- Patent Title (中): 半导体激光元件及半导体激光元件的制造方法
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Application No.: US12716315Application Date: 2010-03-03
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Publication No.: US08842707B2Publication Date: 2014-09-23
- Inventor: Hidehiro Taniguchi , Hirotatsu Ishii , Takeshi Namegaya
- Applicant: Hidehiro Taniguchi , Hirotatsu Ishii , Takeshi Namegaya
- Applicant Address: JP Tokyo
- Assignee: Furukawa Electric Co., Ltd.
- Current Assignee: Furukawa Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/16 ; H01S5/20 ; H01S5/30
Abstract:
A semiconductor laser element includes: a window region including a disordered portion formed by diffusion of a group-III vacancy, the diffusion promoted by providing on the window region a promoting film that absorbs a predetermined atom; a non-window region including an active layer of a quantum well structure; and a difference equal to or larger than 50 meV between an energy band gap in the window region and an energy band gap in the non-window region.
Public/Granted literature
- US20100195685A1 SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LASER ELEMENT Public/Granted day:2010-08-05
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