Invention Grant
- Patent Title: Graphene integrated energy storage devices having capacitive-like properties
- Patent Title (中): 具有电容性特性的石墨烯集成储能装置
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Application No.: US13202082Application Date: 2011-05-17
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Publication No.: US08842416B2Publication Date: 2014-09-23
- Inventor: Sung-wei Chen , Chris Rothfuss
- Applicant: Sung-wei Chen , Chris Rothfuss
- Applicant Address: US DE Wilmington
- Assignee: Empire Technology Development LLC
- Current Assignee: Empire Technology Development LLC
- Current Assignee Address: US DE Wilmington
- International Application: PCT/US2011/036849 WO 20110517
- International Announcement: WO2012/158162 WO 20121122
- Main IPC: H01G9/00
- IPC: H01G9/00 ; H01G11/32 ; H01G11/04 ; H01G11/02

Abstract:
Technologies and implementations for graphene integrated energy storage devices having capacitive-like properties are generally disclosed. Such energy storage devices may comprise capacitive-like properties and may include a first electrode including graphene, one or more electrolytes arranged in contact with the first electrode, and a second electrode arranged in contact with the one or more electrolytes. The energy storage device may further be configured to provide pseudocapacitance based at least in part on a surface layer deposition of a chemical entity accompanied by a charge transfer at the first electrode.
Public/Granted literature
- US20120293911A1 Graphene Integrated Energy Storage Devices Having Capacitive-Like Properties Public/Granted day:2012-11-22
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