Aspects of the invention provide for a bipolar transistor of a self-aligned emitter. In one embodiment, the invention provides a method of forming local wiring for a bipolar transistor with a self-aligned sacrificial emitter, including: performing an etch to remove the sacrificial emitter to form an emitter opening between two nitride spacers; depositing an in-situ doped emitter into the emitter opening; performing a recess etch to partially remove a portion of the in-situ doped emitter; depositing a silicon dioxide layer over the recessed in-situ doped emitter; planarizing the silicon dioxide layer via chemical mechanical polishing; etching an emitter trench over the recessed in-situ doped emitter; and depositing tungsten and forming a tungsten wiring within the emitter trench via chemical mechanical polishing.