Invention Grant
US08841725B2 Semiconductor device having channel dose region and method for manufacturing semiconductor device
有权
具有通道剂量区域的半导体装置及半导体装置的制造方法
- Patent Title: Semiconductor device having channel dose region and method for manufacturing semiconductor device
- Patent Title (中): 具有通道剂量区域的半导体装置及半导体装置的制造方法
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Application No.: US12882038Application Date: 2010-09-14
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Publication No.: US08841725B2Publication Date: 2014-09-23
- Inventor: Masashi Shima
- Applicant: Masashi Shima
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2009-213189 20090915
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L21/8238 ; H01L21/8234 ; H01L27/092 ; H01L29/66 ; H01L29/49 ; H01L21/265 ; H01L29/45
Abstract:
A method for manufacturing a semiconductor device includes forming a first gate electrode on a semiconductor substrate in a first transistor region; forming a channel dose region; and forming a first source extension region, wherein the channel dose region is formed by using a first mask as a mask and by ion-implanting a first dopant of the first conductivity type, and the first mask covering a drain side of the first gate electrode and covering a drain region, and the first source extension region is formed by using a second mask and the gate electrode as masks and by ion-implanting a second dopant of a second conductivity type that is a conductivity type opposite to the first conductivity type, the second mask covering the drain side of the first gate electrode and covering the drain region.
Public/Granted literature
- US20110221000A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-09-15
Information query
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