Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13347004Application Date: 2012-01-10
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Publication No.: US08841719B2Publication Date: 2014-09-23
- Inventor: Seigo Oosawa , Shoji Mizuno , Yutaka Tomatsu
- Applicant: Seigo Oosawa , Shoji Mizuno , Yutaka Tomatsu
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2011-3962 20110112; JP2011-24785 20110208; JP2011-271505 20111212
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/66 ; H01L29/739 ; H01L23/00 ; H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/45 ; H01L29/40

Abstract:
A semiconductor device includes: a semiconductor substrate; an interlayer film on the substrate; a surface electrode on the interlayer film; a surface pad on the surface electrode; a backside electrode on the substrate; an element area including a cell portion having a vertical semiconductor element and a removal portion having multiple contact regions; and an outer periphery area. The surface electrode in the removal portion is electrically coupled with each contact region through a first contact hole in the interlayer film. The surface electrode in the cell portion is electrically coupled with the substrate through a second contact hole in the interlayer film. A part of the surface electrode in the removal portion facing each contact region is defined as a contact portion. The surface electrode includes multiple notches on a shortest distance line segment between each contact portion and the surface pad.
Public/Granted literature
- US20120199900A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-08-09
Information query
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