Invention Grant
- Patent Title: Semiconductor device and method of forming the same
- Patent Title (中): 半导体器件及其形成方法
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Application No.: US13398275Application Date: 2012-02-16
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Publication No.: US08841717B2Publication Date: 2014-09-23
- Inventor: Noriaki Mikasa
- Applicant: Noriaki Mikasa
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.A.R.L.
- Current Assignee: PS4 Luxco S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Agency: Young & Thompson
- Priority: JP2011-033431 20110218
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
In one embodiment, a semiconductor device includes a semiconductor substrate having a first groove; and a plurality of first pillars over the substrate. The plurality of first pillars is disposed beside the first groove. A first insulator is disposed in the first groove. A bit contact is disposed in the first groove and over the first insulator. The bit contact is coupled to side surfaces of the plurality of first pillars.
Public/Granted literature
- US20120211815A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2012-08-23
Information query
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