Invention Grant
- Patent Title: Dielectric reliability assessment for advanced semiconductors
- Patent Title (中): 高级半导体介质可靠性评估
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Application No.: US13899968Application Date: 2013-05-22
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Publication No.: US08839180B1Publication Date: 2014-09-16
- Inventor: Baozhen Li , James H. Stathis , Ernest Y. Wu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Catherine Ivers
- Main IPC: G06F11/22
- IPC: G06F11/22 ; G06F17/50

Abstract:
Embodiments relate to methods, computer systems and computer program products for performing a dielectric reliability assessment for an advanced semiconductor. Embodiments include receiving data associated with a test of a macro of the advanced semiconductor to a point of dielectric breakdown. Embodiments also include scaling the data for the macro down to a reference area and extracting a parameter for a Weibull distribution from the scaled down data for the reference area. Embodiments further include deriving a cluster factor (α) from the scaled down data for the reference area and projecting a failure rate for a larger area of the advanced semiconductor based on the extracted parameter, the cluster factor and the recorded data associated with the dielectric breakdown of the macro.
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