Invention Grant
US08837253B2 Programming pulse generation circuit and non-volatile memory apparatus having the same
有权
编程脉冲发生电路和具有相同功能的非易失性存储装置
- Patent Title: Programming pulse generation circuit and non-volatile memory apparatus having the same
- Patent Title (中): 编程脉冲发生电路和具有相同功能的非易失性存储装置
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Application No.: US13585550Application Date: 2012-08-14
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Publication No.: US08837253B2Publication Date: 2014-09-16
- Inventor: Chang Yong Ahn , Sung Yeon Lee
- Applicant: Chang Yong Ahn , Sung Yeon Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2011-0140444 20111222
- Main IPC: G11C7/12
- IPC: G11C7/12
Abstract:
A program pulse generation circuit includes: a set pulse generator configured to apply a set pulse to an output node in response to a driving signal, a set pulse control signal, and a first switching signal, and a current controller configured to control step reductions forming the set pulse in response to the driving signal and a second switching signal.
Public/Granted literature
- US20130163349A1 PROGRAMMING PULSE GENERATION CIRCUIT AND NON-VOLATILE MEMORY APPARATUS HAVING THE SAME Public/Granted day:2013-06-27
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