Invention Grant
- Patent Title: Memory macro configuration and method
- Patent Title (中): 内存宏配置和方法
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Application No.: US13770161Application Date: 2013-02-19
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Publication No.: US08837249B2Publication Date: 2014-09-16
- Inventor: Sergiy Romanovskyy
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Agent Steven E. Koffs
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
A memory macro comprises a plurality of memory array segments, each having a predetermined number of data inputs and outputs. A segment decoder circuit is configured to: receive a first value indicating a number of memory partitions among which the memory array segments are to be divided, and output a plurality of signals for selectively activating one or more of the plurality of memory array segments to be accessed based on the first value. A plurality of output drivers are coupled to the segment decoder circuit and to respective ones of the outputs. The plurality of output drivers are configured to selectively output data from the respective outputs of each of the respective activated memory array segments.
Public/Granted literature
- US20130155785A1 MEMORY MACRO CONFIGURATION AND METHOD Public/Granted day:2013-06-20
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