Invention Grant
US08837247B2 Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle
有权
使用可控硅整流器原理操作具有浮体晶体管的半导体存储器件的方法
- Patent Title: Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle
- Patent Title (中): 使用可控硅整流器原理操作具有浮体晶体管的半导体存储器件的方法
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Application No.: US14023246Application Date: 2013-09-10
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Publication No.: US08837247B2Publication Date: 2014-09-16
- Inventor: Yuniarto Widjaja
- Applicant: Yuniarto Widjaja
- Applicant Address: US CA Cupertino
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Law Office of Alan W. Cannon
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
An exemplary semiconductor memory cell is provided to include: a floating body region configured to be charged to a level indicative of a state of the memory cell; a first region in electrical contact with the floating body region; a second region in electrical contact with the floating body region and spaced apart from the first region; a gate positioned between the first and second regions; a buried layer region in electrical contact with the floating body region, below the first and second regions, spaced apart from the first and second regions; and a substrate region configured to inject charge into the floating body region to maintain the state of the memory cell; wherein an amount of charge injected into the floating body region is a function of a charge stored in the floating body region.
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