Invention Grant
- Patent Title: Integrated circuit, memory system, and operation method thereof
- Patent Title (中): 集成电路，存储器系统及其操作方法
-
Application No.: US13340015Application Date: 2011-12-29
-
Publication No.: US08837231B2Publication Date: 2014-09-16
- Inventor: Seung-Min Oh
- Applicant: Seung-Min Oh
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0138510 20101230
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/22
Abstract:
An integrated circuit includes an input pad configured to receive a low-speed signal and a high-speed signal, a high-speed buffer coupled to the input pad, a low-speed buffer coupled to the input pad, a strobe input unit configured to receive a strobe signal for indicating an input of the high-speed signal to the input pad, and a buffer control unit configured to control an activation of the high-speed buffer in response to the strobe signal.
Public/Granted literature
- US20120170384A1 INTEGRATED CIRCUIT, MEMORY SYSTEM, AND OPERATION METHOD THEREOF Public/Granted day:2012-07-05
Information query
